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1、utc bt131triac1to-92triacs logic leveldescriptionpassivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. these devices are intended to be interfaced directly to microcontrollers. logic integrated circuits a
2、nd other low power gate trigger circuits.symbolmt2g1:mt1 2:gate 3:mt2mt1absolute maximum ratingsparametersymbolratingsunitrepetitive peak off-state voltagebt131-500 bt131-600 bt131-800vdrm500*600*800*vrms on-state currentfull sine wave; tlead51cit(rms)1anon-repetitive peak on-state current (full sin
3、e wave; tj=25c prior to surge)t=20ms t=16.7msitsm1617.6acircuit fusing (t=10ms)i2t1.28a2srepetitive rate of rise of on-state current after triggering itm=1.5a, ig=0.2a, dig/dt=0.2a/mst2 g t2 g- t2-g- t2-g dit/dt50505010a/mspeak gate voltagevgm5vpeak gate currentigm2apeak gate powerpgm5waverage gate
4、 power (over any 20ms period)pg(av)0.5woperating junction temperaturetj125cstorage temperaturetstg-40150c*although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 3 a/ms.thermal resi
5、stancesparametersymbolmintypmaxunitthermal resistance junction to leadfull cycle half cyclerth j-lead6080k/wthermal resistance junciton to ambient (pcb mounted ;lead length=4mm)rth j-lead150k/welectrical characteristics (tj=25c, unless otherwise specified)parametersymboltest conditionsmintypmaxunits
6、tatic characteristicsgate trigger currentigtvd=12v, it=0.1at2 g t2 g- t2-g- t2-g 0.41.31.43.83337malatching currentilvd=12v, igt=0.1at2 g t2 g- t2-g- t2-g 1.24.01.02.55858maon-state voltage latching currentvtit=2.0a1.21.5vgate trigger voltagevgtvd=12v, it=0.1avd=400v, it=0.1a, tj=125c0.20.70.31.5v
7、off-state leakage currentidvd=vdrm(max), tj=125c0.10.5madynamic characteristicsholding currentihvd=12v, igt=0.1a1.35macritical rate of rise ofoff-state voltagedvd/dtvdm=67% vdrm(max), tj=125cexponential waveform,rgk=1k515v/msgate controlled turn-on timetgtitm=1.5a,vd=vdrm(max), ig=0.1adig/dt=5a/ms2m
8、stypical characteristicsfigure 1.maximum on -state dissipation.ptot vs rms on- state current,it(rms),where =conduction angle.1.4 ptot/wtsp(max)/c 104figure 4.maximum permissible rms current it(rms) vs lead temperature tlead1081.2 it(rms)/a1.210.80.60.40.20 =180 =120 =90 =60 =301071101131161191221251
9、0.80.60.40.2000.20.40.60.81it(rms)/a1.2-50050tsp/100150figure 2. maximum permissible non-repetitivepeak on-state current itsm,vs pulse width tp,for sinusoidal currents,tp 20ms1000 itsm/aititsmtimetj initial=25max100dit/dt limit32.52.01.51figure 5.maximum permissible repetitive rms on-state current i
10、t(rms),vs surge duration,for sinusoidalcurrents,f=50hz;tlead 51it(rms)/a1010ust2-g quadrant 100us1ms t/s10ms100ms0.500.010.1110surge duration /sfigure 3 .maximum permissible non-repetitive peak on-state current itsm,vs number of cycles, for sinusoidal currents,f=50hzitsm/ait itsmtimetj initial=25ma
11、x121086420figure 6.normalised gate trigger voltage vgt(tj)/ vgt(25),vs junction temperature tjvgt(tj)1.6 vgt(25)1.41.210.80.60.4110100number of cycles at 50hz1000-50050tj/100150igt(tj)3 igt(25)figure 7.normalised gate trigger current igt(tj)/igt(25),vs junction temperature tjt2 g 2it/afigure 10.typical and maximum on-state characteristic2.52t2 g- t2-g- t2-g 1.5tj=125tj=25 vo=1.0vtyp1.51.51 rs=0.21ohms0.5max0-50